MOSFET Subthreshold Swing & DIBL Calculator

Nanoelectronics & semiconductor device physics: Compute subthreshold swing ($SS$), body ideality factor ($m$), Drain-Induced Barrier Lowering ($DIBL$), and standby off-state leakage current ($I_{off}$).

Device Electrostatics & Physical Parameters

Operating Temperature T (K): 300 K = 27 °C ambient

Gate Oxide Material:

Physical Oxide Thickness t_ox (nm):

Depletion Depth W_dep (nm):

Gate Length L_g (nm):

Supply Voltage V_DD (V):

Zero-Bias Threshold V_th0 (V):

Interface Trap D_it (10¹¹ cm⁻²eV⁻¹):

Subthreshold Performance & Leakage

Subthreshold Swing SS:

mV / decade

DIBL Parameter:

mV / V (barrier lowering)

Ideality Factor m:

body factor

EOT Equivalent:

nm (SiO2 equiv)

Effective V_th:

V (at V_DD)

Static Standby Leakage Assessment

Off-State Leakage Current I_off: -- nA/μm

Scale Length λ: -- nm

Boltzmann Limit (60 mV/dec): --

Short-Channel Integrity: --

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MOSFET Subthreshold Swing & DIBL Calculator

Device Electrostatics & Physical Parameters

Subthreshold Performance & Leakage

Static Standby Leakage Assessment

Frequently Asked Questions