PN Junction Depletion Width & Potential Calculator
Semiconductor device physics: Calculate the built-in barrier potential ($V_{bi}$), transition depletion width ($W$), peak electric field ($E_{max}$), and junction capacitance ($C_j$).
Semiconductor Material & Temperature
Standard room temp = 300 K
Doping Concentrations & Bias
p-side doping (e.g. Boron in Si)
n-side doping (e.g. Phosphorus in Si)
Negative = Reverse bias, Positive = Forward
Junction area in mm²
Depletion & Electrostatic Output
Built-in Potential V_bi:
--
Volts (V)
Total Depletion Width W:
--
-- nm
Peak Electric Field E_max:
--
kV / cm at junction metallurgic plane
Junction Capacitance C_j:
--
-- pF total
| p-side Depletion Width x_p: | -- |
| n-side Depletion Width x_n: | -- |
| Intrinsic Carrier Density n_i: | -- |
| Thermal Voltage V_th = kT/q: | -- |
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