Reactive Ion Etching ARDE Microloading Calculator
Microfabrication & plasma etching: Model Aspect Ratio Dependent Etching (ARDE / RIE lag), Knudsen radical transport down deep trenches, mask selectivity erosion, and total process etch time ($t_{etch}$).
Etch Feature & Plasma Process
Etch rate in wide, unconfined pads
ARDE & Process Completion Output
Final Bottom Etch Rate:
--
μm / min (at target depth)
Total Etch Time:
--
minutes (including lag)
Aspect Ratio AR:
--
H / W
RIE Lag Percentage:
--
% slowdown
Mask Remaining:
--
μm
Knudsen Transport & Sidewall Quality
Knudsen Transport Factor η_K:
--
Wide Pad Over-Etch Depth:
-- μm
Mask Integrity Status:
--
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